VS-4ESH02-M3/86A Pricing (USD) [370175PC Stock]
- 1 pcs$0.09992
- 1,500 pcs$0.09241
- 3,000 pcs$0.08426
- 7,500 pcs$0.07882
- 10,500 pcs$0.07339
- Nimewo Pati:
- VS-4ESH02-M3/86A
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 200V 4A TO277A. Rectifiers Hypfst Rct 4A 200V
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF, Tiristors - SCR, Diodes - Zener - Single and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division VS-4ESH02-M3/86A electronic components. VS-4ESH02-M3/86A can be shipped within 24 hours after order. If you have any demands for VS-4ESH02-M3/86A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-4ESH02-M3/86A Atribi pwodwi yo
Nimewo Pati :
VS-4ESH02-M3/86A
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 200V 4A TO277A
Seri :
FRED Pt®
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
4A
Voltage - Forward (Vf) (Max) @ Si :
930mV @ 4A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
20ns
Kouran - Fèy Reverse @ Vr :
2µA @ 200V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-277, 3-PowerDFN
Pake Aparèy Founisè :
TO-277A (SMPC)
Operating Tanperati - Junction :
-65°C ~ 175°C
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