Toshiba Semiconductor and Storage - 1SS250(TE85L,F)

KEY Part #: K6458240

1SS250(TE85L,F) Pricing (USD) [999160PC Stock]

  • 1 pcs$0.03906
  • 3,000 pcs$0.03887

Nimewo Pati:
1SS250(TE85L,F)
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
DIODE GEN PURP 200V 100MA SC59. Diodes - General Purpose, Power, Switching 0.1A 200V Switching Diode S-Mini High
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage 1SS250(TE85L,F) electronic components. 1SS250(TE85L,F) can be shipped within 24 hours after order. If you have any demands for 1SS250(TE85L,F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS250(TE85L,F) Atribi pwodwi yo

Nimewo Pati : 1SS250(TE85L,F)
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : DIODE GEN PURP 200V 100MA SC59
Seri : -
Estati Pati : Not For New Designs
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 100mA
Voltage - Forward (Vf) (Max) @ Si : 1.2V @ 100mA
Vitès : Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) : 60ns
Kouran - Fèy Reverse @ Vr : 1µA @ 200V
Kapasite @ Vr, F : 3pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : TO-236-3, SC-59, SOT-23-3
Pake Aparèy Founisè : SC-59
Operating Tanperati - Junction : 125°C (Max)

Ou ka enterese tou
  • 1SS250(TE85L,F)

    Toshiba Semiconductor and Storage

    DIODE GEN PURP 200V 100MA SC59. Diodes - General Purpose, Power, Switching 0.1A 200V Switching Diode S-Mini High

  • SE20AFGHM3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 1.3A DO221AC. Rectifiers 2 Amp 400 volts ESD PROTECTION 13in

  • SE20AFDHM3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 1.3A DO221AC. Rectifiers 2 Amp 200 volts ESD PROTECTION 13in

  • SE20AFBHM3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 1.3A DO221AC. Rectifiers 2 Amp 100 volts ESD PROTECTION 13in

  • SE20AFB-M3/6A

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 1.3A DO221AC. Rectifiers 2 Amp 100 Volts ESD PROTECTION

  • SE20AFD-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 1.3A DO221AC. Rectifiers 2 Amp 200 volts ESD PROTECTION 13in