VS-GB50TP120N Pricing (USD) [1278PC Stock]
- 1 pcs$33.87746
- 24 pcs$32.26421
- Nimewo Pati:
- VS-GB50TP120N
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- IGBT 1200V 100A 446W INT-A-PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Diodes - Rèkteur - Single, Diodes - Zener - Single, Diodes - RF and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division VS-GB50TP120N electronic components. VS-GB50TP120N can be shipped within 24 hours after order. If you have any demands for VS-GB50TP120N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-GB50TP120N Atribi pwodwi yo
Nimewo Pati :
VS-GB50TP120N
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
IGBT 1200V 100A 446W INT-A-PAK
Seri :
-
Estati Pati :
Active
Kalite IGBT :
-
Nou konte genyen :
Half Bridge
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
100A
Pouvwa - Max :
446W
Vce (sou) (Max) @ Vge, Ic :
2.15V @ 15V, 50A
Kouran - Cutoff Pèseptè (Max) :
5mA
Antre kapasite (Cies) @ Vce :
4.29nF @ 25V
Antre :
Standard
NTC thermistor :
No
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake / Ka :
INT-A-PAK (3 + 4)
Pake Aparèy Founisè :
INT-A-PAK
Dènye nouvèl
Ou ka enterese tou
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VS-ETL015Y120H
Vishay Semiconductor Diodes Division
IGBT 1200V 22A 89W EMIPAK-2B. Rectifiers 15A Dbl Interleaved Boost Converter
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