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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. APTM120DA30CT1G

Microsemi Corporation - APTM120DA30CT1G

KEY Part #: K6403799

APTM120DA30CT1G Pricing (USD) [2233PC Stock]

  • 100 pcs$25.45625
Nimewo Pati:
APTM120DA30CT1G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET N-CH 1200V 31A SP1.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single, Tiristors - DIACs, SIDACs, Tiristors - SCR and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APTM120DA30CT1G electronic components. APTM120DA30CT1G can be shipped within 24 hours after order. If you have any demands for APTM120DA30CT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM120DA30CT1G Atribi pwodwi yo

Nimewo Pati : APTM120DA30CT1G
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET N-CH 1200V 31A SP1
Seri : POWER MOS 8™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 31A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 360 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 5V @ 2.5mA
Chaje Gate (Qg) (Max) @ Vgs : 560nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 14560pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 657W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake Aparèy Founisè : SP1
Pake / Ka : SP1

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