Nimewo Pati :
VS-GB400TH120U
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
IGBT 1200V 660A 2660W INT-A-PAK
Nou konte genyen :
Half Bridge
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
660A
Vce (sou) (Max) @ Vge, Ic :
3.6V @ 15V, 400A
Kouran - Cutoff Pèseptè (Max) :
5mA
Antre kapasite (Cies) @ Vce :
33.7nF @ 30V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake / Ka :
Double INT-A-PAK (3 + 4)
Pake Aparèy Founisè :
Double INT-A-PAK