Manifakti :
Renesas Electronics America Inc.
Deskripsyon :
IC DRIVER HISIDE BOOTSTRAP 8SOIC
Kondwi konte genyen :
High-Side
Kalite Chèn :
Independent
Kalite Gate :
N-Channel MOSFET
Voltage - Pwovizyon pou :
4.5V ~ 6.5V
Vòltaj lojik - VIL, VIH :
1.4V, 3V
Kouran - Peak Sòti (Sous, Lavabo) :
200mA, 200mA
Kalite Antre :
Non-Inverting
Segondè Voltage Side - Max (Bootstrap) :
120V
Rise / Fall Time (Tip) :
200ns, 200ns
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOIC