Nimewo Pati :
FGD3N60LSDTM-T
Manifakti :
ON Semiconductor
Deskripsyon :
INTEGRATED CIRCUIT
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
6A
Kouran - Pèseptè batman (Icm) :
25A
Vce (sou) (Max) @ Vge, Ic :
1.5V @ 10V, 3A
Oblije chanje enèji :
250µJ (on), 1mJ (off)
Td (on / off) @ 25 ° C :
40ns/600ns
Kondisyon egzamen an :
480V, 3A, 470 Ohm, 10V
Ranvèse Tan Reverse (trr) :
234ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè :
TO-252, (D-Pak)