ON Semiconductor - FGD3N60LSDTM-T

KEY Part #: K6423474

[9640PC Stock]


    Nimewo Pati:
    FGD3N60LSDTM-T
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    INTEGRATED CIRCUIT.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - Objektif espesyal and Transistors - FETs, MOSFETs - Single ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor FGD3N60LSDTM-T electronic components. FGD3N60LSDTM-T can be shipped within 24 hours after order. If you have any demands for FGD3N60LSDTM-T, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FGD3N60LSDTM-T Atribi pwodwi yo

    Nimewo Pati : FGD3N60LSDTM-T
    Manifakti : ON Semiconductor
    Deskripsyon : INTEGRATED CIRCUIT
    Seri : -
    Estati Pati : Obsolete
    Kalite IGBT : -
    Voltage - Pèseptè ki emèt deba (Max) : 600V
    Kouran - Pèseptè (Ic) (Max) : 6A
    Kouran - Pèseptè batman (Icm) : 25A
    Vce (sou) (Max) @ Vge, Ic : 1.5V @ 10V, 3A
    Pouvwa - Max : 40W
    Oblije chanje enèji : 250µJ (on), 1mJ (off)
    Kalite Antre : Standard
    Gate chaje : 12.5nC
    Td (on / off) @ 25 ° C : 40ns/600ns
    Kondisyon egzamen an : 480V, 3A, 470 Ohm, 10V
    Ranvèse Tan Reverse (trr) : 234ns
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
    Pake Aparèy Founisè : TO-252, (D-Pak)