Toshiba Semiconductor and Storage - 1SV323,H3F

KEY Part #: K6462614

1SV323,H3F Pricing (USD) [1154584PC Stock]

  • 1 pcs$0.03381
  • 4,000 pcs$0.03364
  • 8,000 pcs$0.03177
  • 12,000 pcs$0.02897
  • 28,000 pcs$0.02710

Nimewo Pati:
1SV323,H3F
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
DIODE VARACTOR 10V ESC. Varactor Diodes Variable Cap Diode 10V Vr 4.3 0.4ohm
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Diodes - Zener - Arrays and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage 1SV323,H3F electronic components. 1SV323,H3F can be shipped within 24 hours after order. If you have any demands for 1SV323,H3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SV323,H3F Atribi pwodwi yo

Nimewo Pati : 1SV323,H3F
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : DIODE VARACTOR 10V ESC
Seri : -
Estati Pati : Active
Kapasite @ Vr, F : 7.1pF @ 4V, 1MHz
Pwopòsyon kapasite : 4.3
Kondisyon Pwopòsyon kapasite : C1/C4
Voltage - Peak Ranvèse (Max) : 10V
Kalite dyòd : Single
Q @ Vr, F : -
Operating Tanperati : 125°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : SC-79, SOD-523
Pake Aparèy Founisè : ESC