Vishay Semiconductor Diodes Division - MB10H90HE3_A/P

KEY Part #: K6441425

MB10H90HE3_A/P Pricing (USD) [3480PC Stock]

  • 1,000 pcs$0.26162

Nimewo Pati:
MB10H90HE3_A/P
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 90V 10A TO263AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division MB10H90HE3_A/P electronic components. MB10H90HE3_A/P can be shipped within 24 hours after order. If you have any demands for MB10H90HE3_A/P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MB10H90HE3_A/P Atribi pwodwi yo

Nimewo Pati : MB10H90HE3_A/P
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 90V 10A TO263AB
Seri : Automotive, AEC-Q101
Estati Pati : Obsolete
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 90V
Kouran - Mwayèn Rèktifye (Io) : 10A
Voltage - Forward (Vf) (Max) @ Si : 770mV @ 10A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 4.5µA @ 90V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : TO-263AB
Operating Tanperati - Junction : -65°C ~ 175°C

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