Microsemi Corporation - APT75GN60LDQ3G

KEY Part #: K6422192

APT75GN60LDQ3G Pricing (USD) [7445PC Stock]

  • 1 pcs$5.53519
  • 10 pcs$4.98079
  • 25 pcs$4.53798
  • 100 pcs$4.09520
  • 250 pcs$3.76317
  • 500 pcs$3.43113

Nimewo Pati:
APT75GN60LDQ3G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
IGBT 600V 155A 536W TO264.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT75GN60LDQ3G Atribi pwodwi yo

Nimewo Pati : APT75GN60LDQ3G
Manifakti : Microsemi Corporation
Deskripsyon : IGBT 600V 155A 536W TO264
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 155A
Kouran - Pèseptè batman (Icm) : 225A
Vce (sou) (Max) @ Vge, Ic : 1.85V @ 15V, 75A
Pouvwa - Max : 536W
Oblije chanje enèji : 2500µJ (on), 2140µJ (off)
Kalite Antre : Standard
Gate chaje : 485nC
Td (on / off) @ 25 ° C : 47ns/385ns
Kondisyon egzamen an : 400V, 75A, 1 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-264-3, TO-264AA
Pake Aparèy Founisè : TO-264 [L]

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