GeneSiC Semiconductor - MBR600150CT

KEY Part #: K6468835

MBR600150CT Pricing (USD) [729PC Stock]

  • 1 pcs$63.61256
  • 25 pcs$37.09736

Nimewo Pati:
MBR600150CT
Manifakti:
GeneSiC Semiconductor
Detaye deskripsyon:
DIODE SCHOTTKY 150V 300A 2 TOWER. Schottky Diodes & Rectifiers 150V 600A Forward
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in GeneSiC Semiconductor MBR600150CT electronic components. MBR600150CT can be shipped within 24 hours after order. If you have any demands for MBR600150CT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MBR600150CT Atribi pwodwi yo

Nimewo Pati : MBR600150CT
Manifakti : GeneSiC Semiconductor
Deskripsyon : DIODE SCHOTTKY 150V 300A 2 TOWER
Seri : -
Estati Pati : Active
Konfigirasyon dyòd : 1 Pair Common Cathode
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 150V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : 300A
Voltage - Forward (Vf) (Max) @ Si : 880mV @ 300A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 3mA @ 150V
Operating Tanperati - Junction : -55°C ~ 150°C
Mounting Kalite : Chassis Mount
Pake / Ka : Twin Tower
Pake Aparèy Founisè : Twin Tower
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