Toshiba Semiconductor and Storage - HN1B01FU-Y(L,F,T)

KEY Part #: K6392377

[6195PC Stock]


    Nimewo Pati:
    HN1B01FU-Y(L,F,T)
    Manifakti:
    Toshiba Semiconductor and Storage
    Detaye deskripsyon:
    TRANS NPN/PNP 50V 0.15A US6.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Single, Transistors - Pwogramasyon Unijunction, Diodes - Varyab kapasite (Varicaps, Varactors) and Tiristors - SCR - Modil yo ...
    Avantaj konpetitif:
    We specialize in Toshiba Semiconductor and Storage HN1B01FU-Y(L,F,T) electronic components. HN1B01FU-Y(L,F,T) can be shipped within 24 hours after order. If you have any demands for HN1B01FU-Y(L,F,T), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    HN1B01FU-Y(L,F,T) Atribi pwodwi yo

    Nimewo Pati : HN1B01FU-Y(L,F,T)
    Manifakti : Toshiba Semiconductor and Storage
    Deskripsyon : TRANS NPN/PNP 50V 0.15A US6
    Seri : -
    Estati Pati : Active
    Kalite tranzistò : NPN, PNP
    Kouran - Pèseptè (Ic) (Max) : 150mA
    Voltage - Pèseptè ki emèt deba (Max) : 50V
    Vce saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
    Kouran - Cutoff Pèseptè (Max) : 100nA (ICBO)
    DC Kouran Akeri (HFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
    Pouvwa - Max : 200mW
    Frekans - Tranzisyon : 120MHz
    Operating Tanperati : 125°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 6-TSSOP, SC-88, SOT-363
    Pake Aparèy Founisè : US6

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