Vishay Semiconductor Diodes Division - BYG22A-M3/TR

KEY Part #: K6439822

BYG22A-M3/TR Pricing (USD) [560847PC Stock]

  • 1 pcs$0.06959
  • 9,000 pcs$0.06925

Nimewo Pati:
BYG22A-M3/TR
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE AVALANCHE 50V 2A DO214AC. Rectifiers 2A,50V,25nS UF Fast Avalanche,SMD
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - TRIACs and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BYG22A-M3/TR electronic components. BYG22A-M3/TR can be shipped within 24 hours after order. If you have any demands for BYG22A-M3/TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG22A-M3/TR Atribi pwodwi yo

Nimewo Pati : BYG22A-M3/TR
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE AVALANCHE 50V 2A DO214AC
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Avalanche
Voltage - DC Ranvèse (Vr) (Max) : 50V
Kouran - Mwayèn Rèktifye (Io) : 2A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 2A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 25ns
Kouran - Fèy Reverse @ Vr : 1µA @ 50V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AC, SMA
Pake Aparèy Founisè : DO-214AC (SMA)
Operating Tanperati - Junction : -55°C ~ 150°C

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