Vishay Semiconductor Diodes Division - RMPG06J-E3/73

KEY Part #: K6438769

RMPG06J-E3/73 Pricing (USD) [944565PC Stock]

  • 1 pcs$0.03916
  • 6,000 pcs$0.03622

Nimewo Pati:
RMPG06J-E3/73
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 600V 1A MPG06. Rectifiers 600 Volt 1.0A 200ns 40 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division RMPG06J-E3/73 electronic components. RMPG06J-E3/73 can be shipped within 24 hours after order. If you have any demands for RMPG06J-E3/73, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RMPG06J-E3/73 Atribi pwodwi yo

Nimewo Pati : RMPG06J-E3/73
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 600V 1A MPG06
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 200ns
Kouran - Fèy Reverse @ Vr : 5µA @ 600V
Kapasite @ Vr, F : 6.6pF @ 4V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : MPG06, Axial
Pake Aparèy Founisè : MPG06
Operating Tanperati - Junction : -55°C ~ 150°C

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