Toshiba Semiconductor and Storage - HN1D04FUTE85LF

KEY Part #: K6474867

HN1D04FUTE85LF Pricing (USD) [6294PC Stock]

  • 3,000 pcs$0.03322

Nimewo Pati:
HN1D04FUTE85LF
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
DIODE ARRAY GP 80V 100MA US6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - RF and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage HN1D04FUTE85LF electronic components. HN1D04FUTE85LF can be shipped within 24 hours after order. If you have any demands for HN1D04FUTE85LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HN1D04FUTE85LF Atribi pwodwi yo

Nimewo Pati : HN1D04FUTE85LF
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : DIODE ARRAY GP 80V 100MA US6
Seri : -
Estati Pati : Active
Konfigirasyon dyòd : 2 Pair Series Connection
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 80V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : 100mA
Voltage - Forward (Vf) (Max) @ Si : 1.2V @ 100mA
Vitès : Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) : 1.6ns
Kouran - Fèy Reverse @ Vr : 500nA @ 80V
Operating Tanperati - Junction : 150°C (Max)
Mounting Kalite : Surface Mount
Pake / Ka : 6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè : US6

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