Manifakti :
Panasonic Electronic Components
Deskripsyon :
DIODE GP 80V 100MA USSMINI2-F2-B
Voltage - DC Ranvèse (Vr) (Max) :
80V
Kouran - Mwayèn Rèktifye (Io) :
100mA
Voltage - Forward (Vf) (Max) @ Si :
1.2V @ 100mA
Vitès :
Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) :
3ns
Kouran - Fèy Reverse @ Vr :
100nA @ 80V
Kapasite @ Vr, F :
2pF @ 0V, 1MHz
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
USSMINI2-F2-B
Operating Tanperati - Junction :
150°C (Max)