Toshiba Semiconductor and Storage - HN1C03F-B(TE85L,F)

KEY Part #: K6391694

HN1C03F-B(TE85L,F) Pricing (USD) [617873PC Stock]

  • 1 pcs$0.05986

Nimewo Pati:
HN1C03F-B(TE85L,F)
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
TRANS 2NPN 20V 0.3A SM6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage HN1C03F-B(TE85L,F) electronic components. HN1C03F-B(TE85L,F) can be shipped within 24 hours after order. If you have any demands for HN1C03F-B(TE85L,F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HN1C03F-B(TE85L,F) Atribi pwodwi yo

Nimewo Pati : HN1C03F-B(TE85L,F)
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : TRANS 2NPN 20V 0.3A SM6
Seri : -
Estati Pati : Active
Kalite tranzistò : 2 NPN (Dual)
Kouran - Pèseptè (Ic) (Max) : 300mA
Voltage - Pèseptè ki emèt deba (Max) : 20V
Vce saturation (Max) @ Ib, Ic : 100mV @ 3mA, 30mA
Kouran - Cutoff Pèseptè (Max) : 100nA (ICBO)
DC Kouran Akeri (HFE) (Min) @ Ic, Vce : 350 @ 4mA, 2V
Pouvwa - Max : 300mW
Frekans - Tranzisyon : 30MHz
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : SC-74, SOT-457
Pake Aparèy Founisè : SM6

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