Vishay Semiconductor Diodes Division - VSSAF5N50-M3/6B

KEY Part #: K6428681

VSSAF5N50-M3/6B Pricing (USD) [536214PC Stock]

  • 1 pcs$0.06898
  • 14,000 pcs$0.05999

Nimewo Pati:
VSSAF5N50-M3/6B
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 50V 3A DO221AC. Schottky Diodes & Rectifiers 5A, 50V,TRENCH SKY RECT.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Single, Tiristors - SCR, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - RF, Tiristors - TRIACs and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VSSAF5N50-M3/6B electronic components. VSSAF5N50-M3/6B can be shipped within 24 hours after order. If you have any demands for VSSAF5N50-M3/6B, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VSSAF5N50-M3/6B Atribi pwodwi yo

Nimewo Pati : VSSAF5N50-M3/6B
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 50V 3A DO221AC
Seri : TMBS®, SlimSMA™
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 50V
Kouran - Mwayèn Rèktifye (Io) : 3A (DC)
Voltage - Forward (Vf) (Max) @ Si : 410mV @ 2.5A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 1.4mA @ 50V
Kapasite @ Vr, F : 850pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-221AC, SMA Flat Leads
Pake Aparèy Founisè : DO-221AC (SlimSMA)
Operating Tanperati - Junction : -40°C ~ 150°C

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