Diodes Incorporated - GBJ2008-F

KEY Part #: K6539160

GBJ2008-F Pricing (USD) [44322PC Stock]

  • 1 pcs$1.22955
  • 15 pcs$1.04804
  • 105 pcs$0.84245
  • 510 pcs$0.69217
  • 1,005 pcs$0.57351

Nimewo Pati:
GBJ2008-F
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
BRIDGE RECT 1PHASE 800V 20A GBJ. Bridge Rectifiers 20A 800V
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single, Transistors - IGBTs - Modil yo, Diodes - RF, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in Diodes Incorporated GBJ2008-F electronic components. GBJ2008-F can be shipped within 24 hours after order. If you have any demands for GBJ2008-F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GBJ2008-F Atribi pwodwi yo

Nimewo Pati : GBJ2008-F
Manifakti : Diodes Incorporated
Deskripsyon : BRIDGE RECT 1PHASE 800V 20A GBJ
Seri : -
Estati Pati : Active
Kalite dyòd : Single Phase
Teknoloji : Standard
Voltage - Peak Ranvèse (Max) : 800V
Kouran - Mwayèn Rèktifye (Io) : 20A
Voltage - Forward (Vf) (Max) @ Si : 1.05V @ 10A
Kouran - Fèy Reverse @ Vr : 10µA @ 800V
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : 4-SIP, GBJ
Pake Aparèy Founisè : GBJ

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