Vishay Semiconductor Diodes Division - VB20120S-E3/8W

KEY Part #: K6437185

VB20120S-E3/8W Pricing (USD) [89567PC Stock]

  • 1 pcs$0.43655
  • 800 pcs$0.40888

Nimewo Pati:
VB20120S-E3/8W
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 120V 20A TO263AB. Schottky Diodes & Rectifiers 20 Amp 120 Volt Single TrenchMOS
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VB20120S-E3/8W electronic components. VB20120S-E3/8W can be shipped within 24 hours after order. If you have any demands for VB20120S-E3/8W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VB20120S-E3/8W Atribi pwodwi yo

Nimewo Pati : VB20120S-E3/8W
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 120V 20A TO263AB
Seri : TMBS®
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 120V
Kouran - Mwayèn Rèktifye (Io) : 20A
Voltage - Forward (Vf) (Max) @ Si : 1.12V @ 20A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 300µA @ 120V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : TO-263AB
Operating Tanperati - Junction : -40°C ~ 150°C

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