VB20120S-E3/8W Pricing (USD) [89567PC Stock]
- 1 pcs$0.43655
- 800 pcs$0.40888
- Nimewo Pati:
- VB20120S-E3/8W
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE SCHOTTKY 120V 20A TO263AB. Schottky Diodes & Rectifiers 20 Amp 120 Volt Single TrenchMOS
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Tiristors - SCR - Modil yo, Diodes - Zener - Arrays, Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division VB20120S-E3/8W electronic components. VB20120S-E3/8W can be shipped within 24 hours after order. If you have any demands for VB20120S-E3/8W, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VB20120S-E3/8W Atribi pwodwi yo
Nimewo Pati :
VB20120S-E3/8W
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE SCHOTTKY 120V 20A TO263AB
Seri :
TMBS®
Estati Pati :
Active
Kalite dyòd :
Schottky
Voltage - DC Ranvèse (Vr) (Max) :
120V
Kouran - Mwayèn Rèktifye (Io) :
20A
Voltage - Forward (Vf) (Max) @ Si :
1.12V @ 20A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
300µA @ 120V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
TO-263AB
Operating Tanperati - Junction :
-40°C ~ 150°C
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