Vishay Semiconductor Diodes Division - BYG10G-E3/TR

KEY Part #: K6454913

BYG10G-E3/TR Pricing (USD) [739474PC Stock]

  • 1 pcs$0.05002
  • 1,800 pcs$0.04701
  • 3,600 pcs$0.04231
  • 5,400 pcs$0.03996
  • 12,600 pcs$0.03643
  • 45,000 pcs$0.03408

Nimewo Pati:
BYG10G-E3/TR
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE AVALANCHE 400V 1.5A. Rectifiers 1.5 Amp 400 Volt
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modil yo, Tiristors - SCR and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BYG10G-E3/TR electronic components. BYG10G-E3/TR can be shipped within 24 hours after order. If you have any demands for BYG10G-E3/TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG10G-E3/TR Atribi pwodwi yo

Nimewo Pati : BYG10G-E3/TR
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE AVALANCHE 400V 1.5A
Seri : -
Estati Pati : Active
Kalite dyòd : Avalanche
Voltage - DC Ranvèse (Vr) (Max) : 400V
Kouran - Mwayèn Rèktifye (Io) : 1.5A
Voltage - Forward (Vf) (Max) @ Si : 1.15V @ 1.5A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 4µs
Kouran - Fèy Reverse @ Vr : 1µA @ 400V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AC, SMA
Pake Aparèy Founisè : DO-214AC (SMA)
Operating Tanperati - Junction : -55°C ~ 150°C

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