Toshiba Memory America, Inc. - TC58BVG0S3HBAI6

KEY Part #: K940841

TC58BVG0S3HBAI6 Pricing (USD) [32393PC Stock]

  • 1 pcs$0.92400
  • 10 pcs$0.83202

Nimewo Pati:
TC58BVG0S3HBAI6
Manifakti:
Toshiba Memory America, Inc.
Detaye deskripsyon:
IC FLASH 1G PARALLEL 67VFBGA. NAND Flash 3.3V 1Gb 24nm I-Temp SLC NAND (EEPROM)
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Entèfas - Filtè - aktif, Entèfas - Modèm - ICs ak Modil, Lineyè - Anplifikatè - Instrumentation, OP Amps, A, Done akizisyon - potansyomè dijital, Entèfas - Espesyalize, Entèfas - Vwa Dosye ak lèktur, Lineyè - Anplifikatè - Objektif Espesyal and Lojik - Espesyal lojik ...
Avantaj konpetitif:
We specialize in Toshiba Memory America, Inc. TC58BVG0S3HBAI6 electronic components. TC58BVG0S3HBAI6 can be shipped within 24 hours after order. If you have any demands for TC58BVG0S3HBAI6, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TC58BVG0S3HBAI6 Atribi pwodwi yo

Nimewo Pati : TC58BVG0S3HBAI6
Manifakti : Toshiba Memory America, Inc.
Deskripsyon : IC FLASH 1G PARALLEL 67VFBGA
Seri : Benand™
Estati Pati : Active
Kalite memwa yo : Non-Volatile
Fòma memwa : FLASH
Teknoloji : FLASH - NAND (SLC)
Size memwa : 1Gb (128M x 8)
Frè frekans lan : -
Ekri Sik Tan - Pawòl, Page : 25ns
Tan aksè : 25ns
Entèfas memwa : Parallel
Voltage - Pwovizyon pou : 2.7V ~ 3.6V
Operating Tanperati : -40°C ~ 85°C (TA)
Mounting Kalite : Surface Mount
Pake / Ka : 67-VFBGA
Pake Aparèy Founisè : 67-VFBGA (6.5x8)

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