Vishay Semiconductor Diodes Division - UGB18BCTHE3/45

KEY Part #: K6479248

UGB18BCTHE3/45 Pricing (USD) [105031PC Stock]

  • 1 pcs$0.37228
  • 1,000 pcs$0.31914

Nimewo Pati:
UGB18BCTHE3/45
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE ARRAY GP 100V 18A TO263AB. Rectifiers 18 Amp 100 Volt 20ns Dual 175 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Modil pouvwa chofè, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division UGB18BCTHE3/45 electronic components. UGB18BCTHE3/45 can be shipped within 24 hours after order. If you have any demands for UGB18BCTHE3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UGB18BCTHE3/45 Atribi pwodwi yo

Nimewo Pati : UGB18BCTHE3/45
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE ARRAY GP 100V 18A TO263AB
Seri : -
Estati Pati : Active
Konfigirasyon dyòd : 1 Pair Common Cathode
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : 18A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 9A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 30ns
Kouran - Fèy Reverse @ Vr : 10µA @ 100V
Operating Tanperati - Junction : -65°C ~ 150°C
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : TO-263AB

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