Microsemi Corporation - APTCV50H60T3G

KEY Part #: K6533151

APTCV50H60T3G Pricing (USD) [1865PC Stock]

  • 1 pcs$23.21944
  • 100 pcs$22.61126

Nimewo Pati:
APTCV50H60T3G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
IGBT TRENCH FULL BRIDGE SP3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTCV50H60T3G Atribi pwodwi yo

Nimewo Pati : APTCV50H60T3G
Manifakti : Microsemi Corporation
Deskripsyon : IGBT TRENCH FULL BRIDGE SP3
Seri : -
Estati Pati : Active
Kalite IGBT : NPT, Trench Field Stop
Nou konte genyen : Full Bridge
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 80A
Pouvwa - Max : 176W
Vce (sou) (Max) @ Vge, Ic : 1.9V @ 15V, 50A
Kouran - Cutoff Pèseptè (Max) : 250µA
Antre kapasite (Cies) @ Vce : 3.15nF @ 25V
Antre : Standard
NTC thermistor : Yes
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : SP3
Pake Aparèy Founisè : SP3