Microsemi Corporation - JANTX1N5622

KEY Part #: K6431635

JANTX1N5622 Pricing (USD) [11208PC Stock]

  • 1 pcs$4.23615
  • 107 pcs$4.21507

Nimewo Pati:
JANTX1N5622
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
DIODE GEN PURP 1KV 1A AXIAL. ESD Suppressors / TVS Diodes D MET 1A STD 1KV HR
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modil yo and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in Microsemi Corporation JANTX1N5622 electronic components. JANTX1N5622 can be shipped within 24 hours after order. If you have any demands for JANTX1N5622, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JANTX1N5622 Atribi pwodwi yo

Nimewo Pati : JANTX1N5622
Manifakti : Microsemi Corporation
Deskripsyon : DIODE GEN PURP 1KV 1A AXIAL
Seri : Military, MIL-PRF-19500/427
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 1000V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 3A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 2µs
Kouran - Fèy Reverse @ Vr : 500nA @ 1000V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : A, Axial
Pake Aparèy Founisè : -
Operating Tanperati - Junction : -65°C ~ 200°C

Ou ka enterese tou
  • 1SS193,LF

    Toshiba Semiconductor and Storage

    DIODE GEN PURP 80V 100MA SMINI. Diodes - General Purpose, Power, Switching Hi Spd Switch Diode 0.1A 80V VR

  • SICRD10650CTTR

    SMC Diode Solutions

    DIODE SCHOTTKY SILICON CARBIDE S.

  • 50WQ06FNTR

    SMC Diode Solutions

    SCHOTTKY RECTIFIER 60V D-PAK.

  • VS-6ESH06-M3/87A

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 6A TO277A. Rectifiers Hypfst Rct 6A 600V

  • S4PG-M3/86A

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 4A TO277A. Rectifiers 4.0 Amp 400 Volt

  • AR3PDHM3_A/I

    Vishay Semiconductor Diodes Division

    DIODE AVALANCHE 200V 1.8A TO277A. Rectifiers 3A,200V, SMPC,Fast Recovery, Avalanche