Nimewo Pati :
APTGT75H60T1G
Manifakti :
Microsemi Corporation
Deskripsyon :
POWER MOD IGBT FULL BRIDGE SP1
Kalite IGBT :
Trench Field Stop
Nou konte genyen :
Full Bridge Inverter
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
100A
Vce (sou) (Max) @ Vge, Ic :
1.9V @ 15V, 75A
Kouran - Cutoff Pèseptè (Max) :
250µA
Antre kapasite (Cies) @ Vce :
4.62nF @ 25V
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SP1