Microsemi Corporation - APTGT75H60T1G

KEY Part #: K6532989

APTGT75H60T1G Pricing (USD) [2155PC Stock]

  • 1 pcs$29.90601
  • 10 pcs$28.14547
  • 25 pcs$26.38642
  • 100 pcs$25.15511

Nimewo Pati:
APTGT75H60T1G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
POWER MOD IGBT FULL BRIDGE SP1.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal, Transistors - JFETs, Transistors - IGBTs - Arrays, Diodes - RF, Diodes - Rèkteur - Single and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTGT75H60T1G Atribi pwodwi yo

Nimewo Pati : APTGT75H60T1G
Manifakti : Microsemi Corporation
Deskripsyon : POWER MOD IGBT FULL BRIDGE SP1
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Nou konte genyen : Full Bridge Inverter
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 100A
Pouvwa - Max : 250W
Vce (sou) (Max) @ Vge, Ic : 1.9V @ 15V, 75A
Kouran - Cutoff Pèseptè (Max) : 250µA
Antre kapasite (Cies) @ Vce : 4.62nF @ 25V
Antre : Standard
NTC thermistor : Yes
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : SP1
Pake Aparèy Founisè : SP1