[1556PC Stock]
- Nimewo Pati:
- RGP30BHE3/54
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 100V 3A DO201AD.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Modil pouvwa chofè, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division RGP30BHE3/54 electronic components. RGP30BHE3/54 can be shipped within 24 hours after order. If you have any demands for RGP30BHE3/54, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RGP30BHE3/54 Atribi pwodwi yo
Nimewo Pati :
RGP30BHE3/54
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 100V 3A DO201AD
Seri :
SUPERECTIFIER®
Estati Pati :
Obsolete
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
3A
Voltage - Forward (Vf) (Max) @ Si :
1.3V @ 3A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
150ns
Kouran - Fèy Reverse @ Vr :
5µA @ 100V
Kapasite @ Vr, F :
-
Mounting Kalite :
Through Hole
Pake / Ka :
DO-201AD, Axial
Pake Aparèy Founisè :
DO-201AD
Operating Tanperati - Junction :
-65°C ~ 175°C
Dènye nouvèl
Ou ka enterese tou
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VS-8EWX06FN-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 8A TO252. Rectifiers 8A 600V 15ns Hyperfast
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