Infineon Technologies - BAS16E6327HTSA1

KEY Part #: K6455771

BAS16E6327HTSA1 Pricing (USD) [3047293PC Stock]

  • 1 pcs$0.06328
  • 10 pcs$0.05893
  • 100 pcs$0.03211
  • 500 pcs$0.01977
  • 1,000 pcs$0.01348

Nimewo Pati:
BAS16E6327HTSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching AF DIODE 85V 0.25A
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS16E6327HTSA1 Atribi pwodwi yo

Nimewo Pati : BAS16E6327HTSA1
Manifakti : Infineon Technologies
Deskripsyon : DIODE GEN PURP 80V 250MA SOT23-3
Seri : -
Estati Pati : Last Time Buy
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 80V
Kouran - Mwayèn Rèktifye (Io) : 250mA (DC)
Voltage - Forward (Vf) (Max) @ Si : 1.25V @ 150mA
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 4ns
Kouran - Fèy Reverse @ Vr : 1µA @ 75V
Kapasite @ Vr, F : 2pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : TO-236-3, SC-59, SOT-23-3
Pake Aparèy Founisè : SOT-23-3
Operating Tanperati - Junction : 150°C (Max)

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