DMP2010UFG-13 Pricing (USD) [248099PC Stock]
- 1 pcs$0.14908
- 3,000 pcs$0.13247
- Nimewo Pati:
- DMP2010UFG-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET P-CH 20V 12.7A PWRDI3333.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single, Diodes - RF, Tiristors - TRIACs, Modil pouvwa chofè, Transistors - Objektif espesyal, Transistors - IGBTs - Single and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMP2010UFG-13 electronic components. DMP2010UFG-13 can be shipped within 24 hours after order. If you have any demands for DMP2010UFG-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMP2010UFG-13 Atribi pwodwi yo
Nimewo Pati :
DMP2010UFG-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET P-CH 20V 12.7A PWRDI3333
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12.7A (Ta), 42A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
9.5 mOhm @ 3.6A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
103nC @ 10V
Vgs (Max) :
±10V
Antre kapasite (Ciss) (Max) @ Vds :
3350pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
900mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerDI3333-8
Pake / Ka :
8-PowerWDFN
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