Taiwan Semiconductor Corporation - ES1JL M2G

KEY Part #: K6433789

ES1JL M2G Pricing (USD) [1180825PC Stock]

  • 1 pcs$0.03132

Nimewo Pati:
ES1JL M2G
Manifakti:
Taiwan Semiconductor Corporation
Detaye deskripsyon:
DIODE GEN PURP 600V 1A SUB SMA. Rectifiers 35ns 1A 600V Sp Fst Recov Rectifier
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in Taiwan Semiconductor Corporation ES1JL M2G electronic components. ES1JL M2G can be shipped within 24 hours after order. If you have any demands for ES1JL M2G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES1JL M2G Atribi pwodwi yo

Nimewo Pati : ES1JL M2G
Manifakti : Taiwan Semiconductor Corporation
Deskripsyon : DIODE GEN PURP 600V 1A SUB SMA
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1.7V @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 35ns
Kouran - Fèy Reverse @ Vr : 5µA @ 600V
Kapasite @ Vr, F : 8pF @ 1V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-219AB
Pake Aparèy Founisè : Sub SMA
Operating Tanperati - Junction : -55°C ~ 150°C

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