Nimewo Pati :
RGW80TS65GC11
Manifakti :
Rohm Semiconductor
Deskripsyon :
650V 40A FIELD STOP TRENCH IGBT
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
650V
Kouran - Pèseptè (Ic) (Max) :
78A
Kouran - Pèseptè batman (Icm) :
160A
Vce (sou) (Max) @ Vge, Ic :
1.9V @ 15V, 40A
Oblije chanje enèji :
760µJ (on), 720µJ (off)
Td (on / off) @ 25 ° C :
44ns/143ns
Kondisyon egzamen an :
400V, 40A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247N