Manifakti :
ON Semiconductor
Deskripsyon :
DIODE GEN PURP 600V 4A TO252
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
4A
Voltage - Forward (Vf) (Max) @ Si :
1.5V @ 4A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
60ns
Kouran - Fèy Reverse @ Vr :
100µA @ 600V
Kapasite @ Vr, F :
15pF @ 10V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè :
TO-252AA
Operating Tanperati - Junction :
-65°C ~ 175°C