Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
IC GATE NAND 4CH 2-INP 14SOIC
Voltage - Pwovizyon pou :
4.5V ~ 5.5V
Aktyèl - Mwens (Max) :
1µA
Kouran - Sòti segondè, ki ba :
4mA, 4mA
Nivo Lojik - Segondè :
2V
Max Pwopagasyon Reta @ V, Max CL :
17ns @ 5.5V, 50pF
Operating Tanperati :
-40°C ~ 85°C
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
14-SOIC
Pake / Ka :
14-SOIC (0.154", 3.90mm Width)