Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GP 1.2KV 85A POWIRTAB
Voltage - DC Ranvèse (Vr) (Max) :
1200V
Kouran - Mwayèn Rèktifye (Io) :
85A
Voltage - Forward (Vf) (Max) @ Si :
1.3V @ 85A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
190ns
Kouran - Fèy Reverse @ Vr :
100µA @ 1200V
Mounting Kalite :
Through Hole
Pake / Ka :
PowerTab™, PowIRtab™
Pake Aparèy Founisè :
PowIRtab™
Operating Tanperati - Junction :
-40°C ~ 150°C