[2493PC Stock]
- Nimewo Pati:
- JANTXV1N5807US
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- DIODE GEN PURP 50V 3A D5B. ESD Suppressors / TVS Diodes MIL, QPL PART, 3A 50V ULTRAFAST RECT- SQ END CAPS
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation JANTXV1N5807US electronic components. JANTXV1N5807US can be shipped within 24 hours after order. If you have any demands for JANTXV1N5807US, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
JANTXV1N5807US Atribi pwodwi yo
Nimewo Pati :
JANTXV1N5807US
Manifakti :
Microsemi Corporation
Deskripsyon :
DIODE GEN PURP 50V 3A D5B
Seri :
Military, MIL-PRF-19500/477
Estati Pati :
Discontinued at Digi-Key
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
50V
Kouran - Mwayèn Rèktifye (Io) :
3A
Voltage - Forward (Vf) (Max) @ Si :
875mV @ 4A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
30ns
Kouran - Fèy Reverse @ Vr :
5µA @ 50V
Kapasite @ Vr, F :
60pF @ 10V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
SQ-MELF, B
Pake Aparèy Founisè :
D-5B
Operating Tanperati - Junction :
-65°C ~ 175°C
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