Vishay Semiconductor Diodes Division - RGP10DE-E3/91

KEY Part #: K6443540

RGP10DE-E3/91 Pricing (USD) [2756PC Stock]

  • 12,500 pcs$0.06352

Nimewo Pati:
RGP10DE-E3/91
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 200V 1A DO204AL.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - RF and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division RGP10DE-E3/91 electronic components. RGP10DE-E3/91 can be shipped within 24 hours after order. If you have any demands for RGP10DE-E3/91, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGP10DE-E3/91 Atribi pwodwi yo

Nimewo Pati : RGP10DE-E3/91
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 200V 1A DO204AL
Seri : Automotive, AEC-Q101, Superectifier®
Estati Pati : Obsolete
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 150ns
Kouran - Fèy Reverse @ Vr : 5µA @ 200V
Kapasite @ Vr, F : 15pF @ 4V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : DO-204AL, DO-41, Axial
Pake Aparèy Founisè : DO-204AL (DO-41)
Operating Tanperati - Junction : -65°C ~ 175°C

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