Vishay Semiconductor Diodes Division - ES2DHE3_A/H

KEY Part #: K6448777

ES2DHE3_A/H Pricing (USD) [326142PC Stock]

  • 1 pcs$0.11341
  • 3,000 pcs$0.07596

Nimewo Pati:
ES2DHE3_A/H
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 200V 2A DO214AA. Rectifiers 2A,200V,20ns SMB, UF Rect, SMD
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - JFETs and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division ES2DHE3_A/H electronic components. ES2DHE3_A/H can be shipped within 24 hours after order. If you have any demands for ES2DHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES2DHE3_A/H Atribi pwodwi yo

Nimewo Pati : ES2DHE3_A/H
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 200V 2A DO214AA
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 2A
Voltage - Forward (Vf) (Max) @ Si : 900mV @ 2A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 20ns
Kouran - Fèy Reverse @ Vr : 10µA @ 200V
Kapasite @ Vr, F : 18pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AA, SMB
Pake Aparèy Founisè : DO-214AA (SMB)
Operating Tanperati - Junction : -55°C ~ 150°C