ON Semiconductor - DTC123JET1G

KEY Part #: K6528354

DTC123JET1G Pricing (USD) [3306981PC Stock]

  • 1 pcs$0.01118
  • 3,000 pcs$0.01027
  • 6,000 pcs$0.00927
  • 15,000 pcs$0.00806
  • 30,000 pcs$0.00725
  • 75,000 pcs$0.00645
  • 150,000 pcs$0.00537

Nimewo Pati:
DTC123JET1G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
TRANS PREBIAS NPN 200MW SC75.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Single, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor DTC123JET1G electronic components. DTC123JET1G can be shipped within 24 hours after order. If you have any demands for DTC123JET1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DTC123JET1G Atribi pwodwi yo

Nimewo Pati : DTC123JET1G
Manifakti : ON Semiconductor
Deskripsyon : TRANS PREBIAS NPN 200MW SC75
Seri : -
Estati Pati : Active
Kalite tranzistò : NPN - Pre-Biased
Kouran - Pèseptè (Ic) (Max) : 100mA
Voltage - Pèseptè ki emèt deba (Max) : 50V
Rezistans - Sèvi (R1) : 2.2 kOhms
Rezistans - Sèvi ak emeteur (R2) : 47 kOhms
DC Kouran Akeri (HFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
Vce saturation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA
Kouran - Cutoff Pèseptè (Max) : 500nA
Frekans - Tranzisyon : -
Pouvwa - Max : 200mW
Mounting Kalite : Surface Mount
Pake / Ka : SC-75, SOT-416
Pake Aparèy Founisè : SC-75

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