Vishay Semiconductor Diodes Division - VS-2EGH01-M3/5BT

KEY Part #: K6427796

VS-2EGH01-M3/5BT Pricing (USD) [569175PC Stock]

  • 1 pcs$0.06498

Nimewo Pati:
VS-2EGH01-M3/5BT
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 100V 2A DO214AA.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Single and Diodes - RF ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-2EGH01-M3/5BT electronic components. VS-2EGH01-M3/5BT can be shipped within 24 hours after order. If you have any demands for VS-2EGH01-M3/5BT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-2EGH01-M3/5BT Atribi pwodwi yo

Nimewo Pati : VS-2EGH01-M3/5BT
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 100V 2A DO214AA
Seri : FRED Pt®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 2A
Voltage - Forward (Vf) (Max) @ Si : 900mV @ 2A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 23ns
Kouran - Fèy Reverse @ Vr : 2µA @ 100V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AA, SMB
Pake Aparèy Founisè : DO-214AA (SMBJ)
Operating Tanperati - Junction : -55°C ~ 175°C

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