Diodes Incorporated - DMN3016LFDE-7

KEY Part #: K6417549

DMN3016LFDE-7 Pricing (USD) [659250PC Stock]

  • 1 pcs$0.05611
  • 3,000 pcs$0.05054

Nimewo Pati:
DMN3016LFDE-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 30V 10A U-DFN2020-6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Single, Modil pouvwa chofè, Transistors - Pwogramasyon Unijunction and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMN3016LFDE-7 electronic components. DMN3016LFDE-7 can be shipped within 24 hours after order. If you have any demands for DMN3016LFDE-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN3016LFDE-7 Atribi pwodwi yo

Nimewo Pati : DMN3016LFDE-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 30V 10A U-DFN2020-6
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 12 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 25.1nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1415pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 730mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : U-DFN2020-6 (Type E)
Pake / Ka : 6-UDFN Exposed Pad