Toshiba Semiconductor and Storage - RN2117MFV,L3F

KEY Part #: K6526352

RN2117MFV,L3F Pricing (USD) [2968934PC Stock]

  • 1 pcs$0.01246

Nimewo Pati:
RN2117MFV,L3F
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
X34 PB-F VESM TRANSISTOR PD 150M.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Zener - Single, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Transistors - Objektif espesyal and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage RN2117MFV,L3F electronic components. RN2117MFV,L3F can be shipped within 24 hours after order. If you have any demands for RN2117MFV,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN2117MFV,L3F Atribi pwodwi yo

Nimewo Pati : RN2117MFV,L3F
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : X34 PB-F VESM TRANSISTOR PD 150M
Seri : -
Estati Pati : Active
Kalite tranzistò : PNP - Pre-Biased
Kouran - Pèseptè (Ic) (Max) : 100mA
Voltage - Pèseptè ki emèt deba (Max) : 50V
Rezistans - Sèvi (R1) : 10 kOhms
Rezistans - Sèvi ak emeteur (R2) : 4.7 kOhms
DC Kouran Akeri (HFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
Vce saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA
Kouran - Cutoff Pèseptè (Max) : 500nA
Frekans - Tranzisyon : -
Pouvwa - Max : 150mW
Mounting Kalite : Surface Mount
Pake / Ka : SOT-723
Pake Aparèy Founisè : VESM