RGL34BHE3/83 Pricing (USD) [618527PC Stock]
- 1 pcs$0.05980
- 9,000 pcs$0.05420
- Nimewo Pati:
- RGL34BHE3/83
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 100V 500MA DO213. Diodes - General Purpose, Power, Switching 100 Volt 0.5A 150ns 10 Amp IFSM
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF, Tiristors - TRIACs, Transistors - Objektif espesyal, Tiristors - SCR, Diodes - Rèkteur - Single and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division RGL34BHE3/83 electronic components. RGL34BHE3/83 can be shipped within 24 hours after order. If you have any demands for RGL34BHE3/83, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RGL34BHE3/83 Atribi pwodwi yo
Nimewo Pati :
RGL34BHE3/83
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 100V 500MA DO213
Seri :
SUPERECTIFIER®
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
500mA
Voltage - Forward (Vf) (Max) @ Si :
1.3V @ 500mA
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
150ns
Kouran - Fèy Reverse @ Vr :
5µA @ 100V
Kapasite @ Vr, F :
4pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-213AA (Glass)
Pake Aparèy Founisè :
DO-213AA (GL34)
Operating Tanperati - Junction :
-65°C ~ 175°C
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