Vishay Semiconductor Diodes Division - VS-HFA08TB60SR-M3

KEY Part #: K6434303

VS-HFA08TB60SR-M3 Pricing (USD) [160300PC Stock]

  • 1 pcs$0.23074

Nimewo Pati:
VS-HFA08TB60SR-M3
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 600V 8A D2PAK. Diodes - General Purpose, Power, Switching 600V 8A IF TO-220AC 60A IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR, Tiristors - TRIACs, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-HFA08TB60SR-M3 electronic components. VS-HFA08TB60SR-M3 can be shipped within 24 hours after order. If you have any demands for VS-HFA08TB60SR-M3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-HFA08TB60SR-M3 Atribi pwodwi yo

Nimewo Pati : VS-HFA08TB60SR-M3
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 600V 8A D2PAK
Seri : HEXFRED®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 8A (DC)
Voltage - Forward (Vf) (Max) @ Si : 2.1V @ 16A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 55ns
Kouran - Fèy Reverse @ Vr : 5µA @ 600V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : TO-263AB (D²PAK)
Operating Tanperati - Junction : -55°C ~ 150°C

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