[9437PC Stock]
- Nimewo Pati:
- GT8G133(TE12L,Q)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- IGBT 400V 600MW 8TSSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Tiristors - SCR, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Transistors - IGBTs - Modil yo, Tiristors - SCR - Modil yo and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage GT8G133(TE12L,Q) electronic components. GT8G133(TE12L,Q) can be shipped within 24 hours after order. If you have any demands for GT8G133(TE12L,Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GT8G133(TE12L,Q) Atribi pwodwi yo
Nimewo Pati :
GT8G133(TE12L,Q)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
IGBT 400V 600MW 8TSSOP
Seri :
-
Estati Pati :
Obsolete
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
400V
Kouran - Pèseptè (Ic) (Max) :
-
Kouran - Pèseptè batman (Icm) :
150A
Vce (sou) (Max) @ Vge, Ic :
2.9V @ 4V, 150A
Pouvwa - Max :
600mW
Oblije chanje enèji :
-
Kalite Antre :
Standard
Gate chaje :
-
Td (on / off) @ 25 ° C :
1.7µs/2µs
Kondisyon egzamen an :
-
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-TSSOP (0.173", 4.40mm Width)
Pake Aparèy Founisè :
8-TSSOP
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