Nimewo Pati :
4N25A(SHORT,F)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
OPTOISO 2.5KV TRANS W/BASE 6DIP
Estati Pati :
Last Time Buy
Voltage - Izolasyon :
2500Vrms
Pwopòsyon Transfè Kouran (Min) :
20% @ 10mA
Pwopòsyon aktyèl transfè (Max) :
-
Vire sou / Vire Off Tan (Tip) :
-
Rise / Fall Time (Tip) :
2µs, 200µs
Kalite Sòti :
Transistor with Base
Voltage - Sòti (Max) :
30V
Kouran - Sòti / Chèn :
100mA
Voltage - Forward (Vf) (Tip) :
1.15V
Kouran - DC Forward (Si) (Max) :
80mA
Vce saturation (Max) :
500mV
Operating Tanperati :
-55°C ~ 100°C
Mounting Kalite :
Through Hole
Pake / Ka :
6-DIP (0.300", 7.62mm)
Pake Aparèy Founisè :
6-DIP