Toshiba Semiconductor and Storage - CUS10F30,H3F

KEY Part #: K6452736

CUS10F30,H3F Pricing (USD) [1626459PC Stock]

  • 1 pcs$0.02400
  • 3,000 pcs$0.02388
  • 6,000 pcs$0.02076
  • 15,000 pcs$0.01765
  • 30,000 pcs$0.01661
  • 75,000 pcs$0.01557

Nimewo Pati:
CUS10F30,H3F
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
DIODE SCHOTTKY 30V 1A USC. Schottky Diodes & Rectifiers 30V Vrrm 1.0A IF 20A .045V VFM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Transistors - JFETs, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Tiristors - DIACs, SIDACs and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage CUS10F30,H3F electronic components. CUS10F30,H3F can be shipped within 24 hours after order. If you have any demands for CUS10F30,H3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CUS10F30,H3F Atribi pwodwi yo

Nimewo Pati : CUS10F30,H3F
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : DIODE SCHOTTKY 30V 1A USC
Seri : -
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 30V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 500mV @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 50µA @ 30V
Kapasite @ Vr, F : 170pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : SC-76, SOD-323
Pake Aparèy Founisè : USC
Operating Tanperati - Junction : 125°C (Max)

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