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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. DRAM
  4. LPDDR4X
  5. K4U2E3S4AA-GUCL

Samsung Semiconductor - K4U2E3S4AA-GUCL

KEY Part #: K7359740

[26054PC Stock]

    Nimewo Pati:
    K4U2E3S4AA-GUCL
    Manifakti:
    Samsung Semiconductor
    Detaye deskripsyon:
    12 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 125 °C 200FBGA Mass Production.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: LPDDR4X, MODULE, SLC Nand, HBM Aquabolt, LPDDR4, DDR4, GDDR6 and GDDR5 ...
    Avantaj konpetitif:
    We specialize in Samsung Semiconductor K4U2E3S4AA-GUCL electronic components. K4U2E3S4AA-GUCL can be shipped within 24 hours after order. If you have any demands for K4U2E3S4AA-GUCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4U2E3S4AA-GUCL Atribi pwodwi yo

    Nimewo Pati : K4U2E3S4AA-GUCL
    Manifakti : Samsung Semiconductor
    Deskripsyon : 12 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 125 °C 200FBGA Mass Production
    Seri : DDR3
    dansite : 12 Gb
    Org. : x32
    vitès : 4266 Mbps
    Voltage : 1.8 / 1.1 / 0.6 V
    Tanperatur. : -40 ~ 125 °C
    Pake : 200FBGA
    pwodwi dènye nouvèl : Mass Production

    Dènye nouvèl

    Unlocking the Power of Cloud Computing
    [Video] 5G memory solutions : 5G. All in the Memory.
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Mass Production of Fifth-Generation V-NAND has Started
    5G and Memory - from Connected Thinking to Connected Living
    Inside the building blocks of the 5G future
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Speed for the next generation of mobile devices
    Autonomous Driving and the Quest for Safety
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    The Ultra-Low Latency SSD, Z-SSD
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