Nimewo Pati :
EGL34BHE3/98
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 100V 500MA DO213
Estati Pati :
Discontinued at Digi-Key
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
500mA
Voltage - Forward (Vf) (Max) @ Si :
1.25V @ 500mA
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
50ns
Kouran - Fèy Reverse @ Vr :
5µA @ 100V
Kapasite @ Vr, F :
7pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-213AA (Glass)
Pake Aparèy Founisè :
DO-213AA (GL34)
Operating Tanperati - Junction :
-65°C ~ 175°C