Toshiba Memory America, Inc. - TH58NYG2S3HBAI4

KEY Part #: K934687

TH58NYG2S3HBAI4 Pricing (USD) [13416PC Stock]

  • 1 pcs$3.41542

Nimewo Pati:
TH58NYG2S3HBAI4
Manifakti:
Toshiba Memory America, Inc.
Detaye deskripsyon:
4GB SLC NAND 24NM BGA 9X11 1.8V. NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Revèy / Distribisyon - Liy reta, PMIC - regilatè Voltage - regulateur lineyè regila, PMIC - Jesyon Pouvwa - Espesyalize, Revèy / Distribisyon - Batri IC, Done akizisyon - ADCs / DACs - Objektif espesyal, Memwa - konfigirasyon bal fen pou FPGAs, Revèy / Distribisyon - Aplikasyon espesifik and Lojik - Gates ak Inverters - Multi-Fonksyon, confi ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TH58NYG2S3HBAI4 Atribi pwodwi yo

Nimewo Pati : TH58NYG2S3HBAI4
Manifakti : Toshiba Memory America, Inc.
Deskripsyon : 4GB SLC NAND 24NM BGA 9X11 1.8V
Seri : -
Estati Pati : Active
Kalite memwa yo : Non-Volatile
Fòma memwa : FLASH
Teknoloji : FLASH - NAND (SLC)
Size memwa : 4Gb (512M x 8)
Frè frekans lan : -
Ekri Sik Tan - Pawòl, Page : 25ns
Tan aksè : -
Entèfas memwa : Parallel
Voltage - Pwovizyon pou : 1.7V ~ 1.95V
Operating Tanperati : -40°C ~ 85°C (TA)
Mounting Kalite : Surface Mount
Pake / Ka : 63-BGA
Pake Aparèy Founisè : 63-BGA (9x11)