Nimewo Pati :
TH58NYG2S3HBAI4
Manifakti :
Toshiba Memory America, Inc.
Deskripsyon :
4GB SLC NAND 24NM BGA 9X11 1.8V
Kalite memwa yo :
Non-Volatile
Teknoloji :
FLASH - NAND (SLC)
Size memwa :
4Gb (512M x 8)
Ekri Sik Tan - Pawòl, Page :
25ns
Voltage - Pwovizyon pou :
1.7V ~ 1.95V
Operating Tanperati :
-40°C ~ 85°C (TA)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
63-BGA (9x11)