Manifakti :
Texas Instruments
Deskripsyon :
IC GATE DRIVER FET/IGBT 8SOIC
Kondwi konte genyen :
High-Side or Low-Side
Kalite Gate :
IGBT, N-Channel MOSFET
Voltage - Pwovizyon pou :
10V ~ 32V
Vòltaj lojik - VIL, VIH :
1.2V, 2.2V
Kouran - Peak Sòti (Sous, Lavabo) :
2.5A, 5A
Kalite Antre :
Non-Inverting
Segondè Voltage Side - Max (Bootstrap) :
-
Rise / Fall Time (Tip) :
15ns, 7ns
Operating Tanperati :
-40°C ~ 140°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOIC